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November 1997
FDC653N
N-Channel Enhancement Mode Field Effect Transistor
General Description
This N-Channel enhancement mode power field effect
transistors is produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
tailored to minimize on-state resistance. These devices are
particularly suited for low voltage applications in notebook
computers, portable phones, PCMICA cards, and other
battery powered circuits where fast switching, and low in-line
power loss are needed in a very small outline surface mount
package.
Features
5 A, 30 V. R DS(ON) = 0.035 ? @ V GS = 10 V
R DS(ON) = 0.055 ? @ V GS = 4.5 V.
Proprietary SuperSOT TM -6 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R DS(ON) .
Exceptional on-resistance and maximum DC current
capability.
.65
SOT-23
SuperSOT TM -6
D
D
S
3
SuperSOT TM -8
SO-8
1
2
SOT-223
6
5
SOIC-16
G
SuperSOT
TM
-6
pin 1
D
D
3
4
Absolute Maximum Ratings
T A = 25°C unless otherwise note
Symbol Parameter
FDC653N
Units
V DSS
V GSS
Drain-Source Voltage
Gate-Source Voltage - Continuous
30
±20
V
V
I D
Drain Current - Continuous
(Note 1a)
5
A
- Pulsed
15
P D
Maximum Power Dissipation
(Note 1a)
1.6
W
(Note 1b)
0.8
T J ,T STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
°C/W
°C/W
? 1997 Fairchild Semiconductor Corporation
FDC653N Rev.C
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相关代理商/技术参数
FDC653N_F095 功能描述:MOSFET 30V 5A N-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC653N-CUT TAPE 制造商:FAIRCHILD 功能描述:FDC653N 30 V 0.035 Ohm N-Ch Enhancement Mode Field Effect Transistor - SSOT-6
FDC654P 功能描述:MOSFET SSOT-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC654P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDC654P_G 制造商:FAIRCHILD 功能描述:MOSFET, -30V/3.6A, SSOT6 (Halogen Free)
FDC654P-CUT TAPE 制造商:FAIRCHILD 功能描述:FDC654P Series 30 V 75 mOhm Single P-Ch Logic Level PowerTrench Mosfet SSOT-6
FDC655AN 功能描述:MOSFET SSOT-6 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC655AN 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SUPERSOT-6